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Intern - NAND CMOS Development

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Micron Technology

Jan 17, 2024

Applications are closed

  • Internship
    Full-time
    Off-cycle Internship
  • Science
    Engineering
  • Boise

Requirements

  • Knowledge of Device Physics and Materials used in Semiconductor Devices, Device Operation, and Analog and Digital Circuit Operation
  • BSC in EE or Solid State Physics
  • Preferred: background in CMOS transistor technology (45nm …FINFet technology)
  • Interest in CMOS device simulation & technology, coding for characterization setup, data analysis and mining, presentation of results
  • Skills: MS Office, JMP, Python, Cadence, Sentaurus TCAD (not all are mandatory)
  • Education Requirements:
  • Pursuing a MS/PhD in Electrical Engineering, Physics, or Materials Science.

Responsibilities

  • Perform device characterization measurements such as I-V curves, C-V characterization or similar, on various types of transistors or test circuits
  • Do stress tests on CMOS devices like Hot-carrier, Gate oxide reliability tests or similar
  • Compare different test structures for key device parameters, to find optimum layout and process conditions
  • If applicable, compare results with simulation model
  • Compile results in comprehensive reports
  • If applicable, devise new test structures for future test chips
  • Help & support by supervisor will be provided, together with hands-on training
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Micron Technology

We're accelerating the transformation of information to intelligence.

Manufacturing & Electronics
Industry
1-10
Employees
1978
Founded Year

Mission & Purpose

Micron is a world leader in innovative memory solutions that transform how the world uses information. We have approximately 40,000 team members in 17 countries who work with the world’s most trusted brands, delivering memory and storage systems for a broad range of applications and sparking countless possibilities in technology.